?2003 fairchild semiconductor corporation fga40n60ufd rev. a igbt fga40n60ufd fga40n60ufd ultrafast igbt general description fairchild's ufd series of insulated gate bipolar transistors (igbts) provides low conduction and switching losses. the ufd series is designed for applications such as motor control and general inverters where high speed switching is a required feature. features high speed switching low saturation voltage : v ce(sat) = 2.3 v @ i c = 20a high input impedance co-pak, igbt with frd : t rr = 50ns (typ.) absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description fga40n60ufd units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c40 a collector current @ t c = 100 c20 a i cm (1) pulsed collector current 160 a i f diode continuous forward current @ t c = 100 c15 a i fm diode maximum forward current 160 a p d maximum power dissipation @ t c = 25 c 160 w maximum power dissipation @ t c = 100 c64 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.77 c / w r jc (diode) thermal resistance, junction-to-case -- 1.7 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w applications ac & dc motor controls, general purpose inverters, robotics, and servo controls. g c e to-3p g c e g c e
?2003 fairchild semiconductor corporation fga40n60ufd rev. a fga40n60ufd electrical characteristics of the igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coefficient of break- down voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 3.5 5.1 6.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -- 2.3 3.0 v i c = 40a , v ge = 15v -- 3.1 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1075 -- pf c oes output capacitance -- 170 -- pf c res reverse transfer capacitance -- 50 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 c -- 15 -- ns t r rise time -- 30 -- ns t d(off) turn-off delay time -- 65 130 ns t f fall time -- 35 100 ns e on turn-on switching loss -- 470 -- uj e off turn-off switching loss -- 130 -- uj e ts total switching loss -- 600 1000 uj t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 ? , v ge = 15v , inductive load, t c = 125 c -- 30 -- ns t r rise time -- 37 -- ns t d(off) turn-off delay time -- 110 200 ns t f fall time -- 80 250 ns e on turn - on switching loss -- 500 -- uj e off turn - off switching loss -- 310 -- uj e ts total switching loss -- 810 1200 uj q g total gate charge v ce = 300 v, i c = 20a, v ge = 15v -- 77 150 nc q ge gate-emitter charge -- 20 30 nc q gc gate-collector charge -- 25 40 nc l e internal emitter inductance measured 5mm from pkg -- 14 -- nh symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 15a t c = 25 c -- 1.4 1.7 v t c = 100 c -- 1.3 -- t rr diode reverse recovery time i f = 15a, di/dt = 200a/us t c = 25 c -- 50 95 ns t c = 100 c -- 74 -- i rr diode peak reverse recovery current t c = 25 c -- 4.5 6.0 a t c = 100 c -- 6.5 -- q rr diode reverse recovery charge t c = 25 c -- 80 180 nc t c = 100 c -- 220 --
?2003 fairchild semiconductor corporation fga40n60ufd rev. a fga40n60ufd fig 1. typical output characteristics fig 2. typical saturation voltage fig. 1 fig3.saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 40 80 120 160 12v 15v 20v v ge = 10v common emitter tc = 25 collector current, i c (a) collector-emitter voltage,v ce (v) 110 0 10 20 30 40 50 60 70 80 0.5 common emitter v ge =15v tc= 25 tc= 125 collector current , ic (a) collector-emitter voltage, v ce (v) 0306090120150 0 1 2 3 4 20a ic=10a 40a common emitter vge=15v case temperature, t c [ ] collector - emitter voltage, v ce [v] 0.1 1 10 100 1000 0 5 10 15 20 25 30 vcc = 300v load current : peak of square wave duty cycle : 50% tc = 100 powe dissipation = 32w load current [a] frequency [khz] 0 4 8 12 16 20 0 4 8 12 16 20 40a 20a i c = 10a common emitter t c = 25 gate - emitter voltage, v ge [v] collector - emitter voltage, v ce [v] 0 4 8 121620 0 4 8 12 16 20 20a 40a ic=10a common emitter t c = 125 collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v]
?2003 fairchild semiconductor corporation fga40n60ufd rev. a fga40n60ufd fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110100 10 100 200 300 ton tr common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 switching time (ns) gate resistance, r g ( ? ) 110 0 500 1000 1500 2000 2500 3000 common emitter v ge = 0v, f = 1mhz t c = 25 30 cres coes cies capacitance (pf) collector-emitter voltage, v ce (v) 110100 100 1000 20 200 tf common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 toff tf switching time (ns) gate resistance, r g ( ? ) 1 10 100 100 1000 2000 50 200 eon eoff common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 switching time (uj) gate resistance, r g ( ? ) 10 15 20 25 30 35 40 10 100 200 tr ton collector current, ic (a) switching time (ns) common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 10 15 20 25 30 35 40 100 1000 20 tf toff common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 collector current, i c [a] switching time [ns] toff tf
?2003 fairchild semiconductor corporation fga40n60ufd rev. a fga40n60ufd 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] rectangular pulse duration [sec] 1 10 100 1000 0.1 1 10 100 500 safe operating area v ge =20v, t c =100 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.3 1 10 100 1000 0.1 1 10 100 500 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c fig 17. transient thermal impedance of igbt 10 15 20 25 30 35 40 10 100 1000 3000 eoff switching time (uj) eon eoff common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 collector current , ic (a) 0 306090120 0 3 6 9 12 15 200v 300v vcc=100v common emitter r l =15 ? (tc=25 ) gate-emitter voltage, v ge (v) gate charge, qg (nc)
?2003 fairchild semiconductor corporation fga40n60ufd rev. a fga40n60ufd 100 1000 20 40 60 80 100 120 v r = 200v i f = 15a t c = 25 t c = 100 reverce recovery time, t rr [ns] di/dt [a/us] 100 1000 1 10 100 v r = 200v i f = 15a t c = 25 t c = 100 reverse recovery current, i rr [a] di/dt [a/us] 100 1000 0 200 400 600 800 v r = 200v i f = 15a t c = 25 t c = 100 stored recovery charge, q rr [nc] di/dt [a/us] 1 10 100 0123 t c = 25 t c = 100 forward voltage drop, v f [v] forward current, i f [a] fig 19. reverse recovery current fig 18. forward characteristics fig 20. stored charge fig 21. reverse recovery time
?2003 fairchild semiconductor corporation fga40n60ufd rev. a fga40n60ufd package dimensions 15.60 0.20 4.80 0.20 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.20 ?.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.15 ?.05 0.60 +0.15 ?.05 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] to-3p
?2003 fairchild semiconductor corporation trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i2 fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? isoplanar? littlefet? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? trutranslation? uhc? ultrafet ? vcx? acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? across the board. around the world.? the power franchise? programmable active droop?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging fga40n60ufd ultrafast igbt general description back to top features back to top applications back to top contents ? general description ? features ? applications ? product status/pricing/packaging ? order samples ? qualification support fairchild's ufd series of insulate d gate bipolar transistors (igbts) provides low conduction and switching losses. the ufd series is designed for applications such as motor control and general inverters where high speed switching is a required feature. z high speed switching z low saturation voltage : v ce(sat) = 2.3 v @ i c = 20a z high input impedance z co-pak, igbt with frd : t rr = 50ns (typ.) z ac & dc motor controls , general purpose inverters, robotics, and servo controls. datasheet download this datasheet e - mail this datasheet this page print version related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/n fga40n60ufd - u ltrafast igbt 17-au g -2007 mhtml:file://c:\te mp\FGA40N60UFDTU.mht
back to top qualification support click on a product for detailed qualification data back to top product product status pb-free status pricing* package type leads packing method package marking convention** FGA40N60UFDTU full production $4.49 to - 3p 3 rail line 1: $y (fairchild logo) line 2: fga40n60 line 3: ufd&3 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributor to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product fga40n60ufd is available. click here for more information . product FGA40N60UFDTU ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/n fga40n60ufd - u ltrafast igbt 17-au g -2007 mhtml:file://c:\te mp\FGA40N60UFDTU.mht
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